Phys Rev B 2012,86(16):165123.CrossRef selleck chemicals 20. Fuechsle M, Mahapatra S, Zwanenburg FA, Friesen M, Eriksson MA, Simmons MY: Spectroscopy of few-electron single-crystal silicon quantum dots. Nat Nanotechnol 2010, 5:502–505. 10.1038/nnano.2010.95CrossRef 21. Drumm DW, Budi A, Per MC, Russo SP, Hollenberg LCL: Ab initio calculation of valley splitting in monolayer δ -doped phosphorus in silicon. Nanoscale Research Letters 2013, 8:arXiv:1201.3751v1 [cond-mat.mtrl-sci].CrossRef 22. Drumm DW:
Physics of low-dimensional nano structures. PhD thesis, The University of Melbourne, 2012 23. Carter DJ, Warschkow O, Marks NA, Mackenzie DR: Electronic structure of two interacting phosphorus δ -doped layers in silicon. Phys Rev B 2013, 87:045204.CrossRef 24. Tucker JR, Shen T-C: Prospects for atomically ordered device structures based on STM PF-4708671 lithography. Solid State Electron 1998,42(7–8):1061–1067.CrossRef 25. O’Brien JL, Schofield SR, Simmons MY, Clark RG, Dzurak AS, Curson NJ, Kane BE, McAlpine NS, Hawley ME, Brown GW: Towards the fabrication of phosphorus qubits for a silicon quantum computer. Phys Rev B 2001,
64:161401(R).CrossRef 26. Shen T-C, Ji J-Y, Zudov MA, Du R-R, Kline JS, Tucker JR: Ultradense phosphorous delta layers grown into silicon from PH 3 molecular precursors. Appl Phys Lett 2002,80(9):1580–1582. 10.1063/1.1456949CrossRef 27. Fuechsle M, Ruess FJ, Reusch TCG, Mitic M, Simmons MY: Surface gate
and contact alignment for buried, atomically precise scanning Z-VAD-FMK research buy tunneling microscopy-ppatterned devices. J Vac Sci Tech Verteporfin purchase B 2007,25(6):2562–2567. 10.1116/1.2781512CrossRef 28. Artacho E, Anglada E, Diéguez O, Gale JD, Garciá A, Junquera J, Martin P, Ordejón RM, Pruneda JM, Sánchez-Portal D, Soler JM: The SIESTA method; developments and applicability. J Phys Condens Matter 2008, 20:064208. 10.1088/0953-8984/20/6/064208CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions DWD, MCP, and LCLH planned the study. DWD, MCP and AB performed the calculations. All authors analysed the results and wrote the manuscript. All authors read and approved the final manuscript.”
“Background As a novel class of two-dimensional carbon nanostructures, graphene oxide sheets (GOSs) have received considerable attention in recent years in the fields of plasmonics [1–3] and surface plasmon resonance (SPR) biosensors [4–11], following both experimental and theoretical scientific discoveries. GOSs have remarkable optical [12–19] and biosensing [20–28] properties and are expected to have a wide range of applications. A GOS has a high surface area and sp2 within an sp3 matrix that can confine π-electrons [12–14, 29]. GOSs contain oxygen at their surfaces in the form of epoxy (-O), hydroxyl (-OH), carboxyl (-COOH), and ether functional groups on a carbon framework [30–35].