Theoretical calculations and experimental results indicate that WO3−x films can be colored and conductive or transparent and MG-132 concentration resistive depending on the level of oxygen vacancies [16]. The memristive switching behavior in WO3 granular films has already been reported many times [19–22]. Single-crystalline WO3 one-dimensional (1D) nanostructures, with high surface-to-volume ratio and small grain size, have exhibited more outstanding electrical and chromic properties [23–25]. The drift of +2-charged oxygen vacancies in WO3 1D nanostructures will influence the axial distribution of oxygen vacancies and then create or annihilate conducting

channels easily, which might further enrich their electrical transport properties remarkably. Therefore, the memristive switching of WO3 1D nanostructures induced by oxygen vacancies become more important not only for further CBL-0137 understanding the physics of electrical switching but also for mass production of the RRAM devices. In this work, we report the memristive effect induced by oxygen vacancy drift in WO3 nanowires with submicron length. The two-terminal Au/WO3 nanowire/Au devices exhibit resistive behavior under small bias voltage (electric field GSK690693 strength less than 106 V/m) at room temperature, and memristive

behavior under large bias voltage or at elevated temperature. If the two ohmic contacts between WO3 nanowire and two Au electrodes are asymmetric, the axial distribution of oxygen vacancies in WO3 nanowire can be more D-malate dehydrogenase easily regulated with bias voltage, and then the electrical transport properties can be modulated more remarkably. The electronic devices can exhibit controllable linear resistance (up to 3 to 4 orders of magnitude) when the drift of oxygen vacancies is negligible under small bias voltage at room temperature

and will exhibit asymmetric memristive effect and even good rectifying characteristic when the oxygen vacancies prefer to drift asymmetrically between two asymmetric ohmic contacts. Several nanoelectronic device prototypes, such as memristor, rectifier and two-terminal RRAM, have been proposed on individual WO3 nanowires. Methods Hydrothermal synthesis of WO3 Hexagonal WO3 nanowires used in this investigation, with typical diameters about 80 nm, were synthesized by aging WO3 sol–gel at 180°C for 48 h as previously reported [26]. Fabrication of nanowire devices WO3 nanowires were first dispersed in ethanol by sonication. Thereafter, they were deposited on a highly n-doped silicon wafer with a 100-nm SiO2 layer by putting one droplet of suspension on the surface. Finger electrodes were defined using a conventional photolithographic procedure and formed by evaporating 100-nm Au on the highly n-doped silicon wafer.